Andok R.Vutova K.Bencurova A.Kostic I.Koleva E.2024-07-102024-07-102024-07-102024-07-102023-01-011742-65961742-658810.1088/1742-6596/2443/1/012006SCOPUS_ID:85149921190https://rlib.uctm.edu/handle/123456789/802In this work, four types of negative electron beam resists are investigated. Electron beam lithography (EBL) experiments were conducted using EBL system ZBA23 (Raith) with the variable-shaped electron beam cross-section at 40 keV electron energy. Important electron beam resist characteristics such as sensitivity, dissolution rate, aspect ratio and sidewall developed profiles in the chemically amplified resist (CAR) SU-8 2000, non-CARs ma-N 2410 and ARN-7520, and inorganic negative resist HSQ XR-1514 are studied and compared. This study was motivated by the selection of a suitable resist for practical use such as large area gratings fabrication for optoelectronics.enConference Paper