Ivanova V.Trifonova Y.Lilova V.Mikli V.Stoyanova-Ivanova A.2024-07-162024-07-162024-07-162024-07-162018-01-011314-79781314-7471SCOPUS_ID:85047394024https://rlib.uctm.edu/handle/123456789/1215Tellurium based materials possess a low temperature phase change transition. Sometimes they cannot be obtained in an amorphous state under normal conditions. Thus they can be used as an active element in phase change memory devices. Our study is dedicated to the synthesis of tellurium based materials using the systems (GeTe3)100-xInx, x = 5 mol %, 10 mol %, 15 mol % and 20 mol % and (GeTe4)100-xInx, x = 5 mol %, 10 mol %, 15 mol % and 20 mol %, the deposition of thin films on their ground and the investigation of their morphology, topology and structure aiming to obtain new knowledge for evaluation of the possibility for application of these materials in phase change memory devices.enArticle