Pashova K.Dhaouadi E.Hinkov I.Brinza O.Roussigné Y.Abderrabba M.Farhat S.2024-07-102024-07-102024-07-102024-07-102020-04-012079-641210.3390/coatings10040305SCOPUS_ID:85083841417https://rlib.uctm.edu/handle/123456789/585We report on the design of a reactor to grow graphene via inductively heating of copper foils by radio frequency (RF) magnetic fields. A nearly uniform magnetic field induced by Helmholtz-like coils penetrates the copper foil generating eddy currents. While the frequency of the current is being rapidly varied, the substrate temperature increases from room temperature to ~1050 °C in 60 s. This temperature is maintained under Ar/H2 flow to reduce the copper, and under Ar/H2/CH4 to nucleate and grow the graphene over the entire copper foil. After the power cut-off, the temperature decreases rapidly to room temperature, stopping graphene secondary nucleation. Good quality graphene was obtained and transferred onto silicon, and coated with a 300 nm layer of SiO2 by chemical etching of the copper foil. After synthesis, samples were characterized by Raman spectroscopy. The design of the coils and the total power requirements for the graphene induction heating system were first estimated. Then, the effect of the process parameters on the temperature distribution in the copper foil was performed by solving the transient and steady-state coupled electromagnetic and thermal problem in the 2D domain. The quantitative effects of these process parameters were investigated, and the optimization analysis results are reported providing a root toward a scalable process for large-sized graphene.enArticle