Browsing by Author "Konecnikova A."

Now showing 1 - 3 of 3
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    Comparative study of the sidewall shape and proximity effect of the AR-N 7520 negative electron beam resist
    (2022-04-04) Kostic I.; Vutova K.; Koleva E.; Bencurova A.; Konecnikova A.; Andok R.
    This paper deals with the performance of the AR-N7520 (Allresist) negative electron beam resist (EB resist) which was selected as an etch mask for the fabrication of gratings on GaAs substrates. The developed resist sidewall shape is crucial for this purpose. The required near-to-vertical sidewall shape can be achieved by optimizing the electron beam lithography (EBL) process based on experimental investigations and computer simulations. The sidewall shape dependence on the EBL parameters (exposure dose, resist pattern, etc.) and the proximity effect are studied.
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    Optimisation criteria for the process electron beam lithography of negative AR-N7520 resists
    (2023-01-01) Koleva E.; Kostic I.; Andok R.; Vutova K.; Bencurova A.; Konecnikova A.
    Experimental investigation of negative electron resist AR-N 7520 profiles using an electron beam lithography system ZBA23 (Raith) is performed at variation of the exposure doses and the exposure patterns. The form of the obtained after the exposure resist profiles is investigated and optimized. Artificial neural networks for the dependence of the overall geometry of the obtained resist profiles on process parameters are trained, tested and validated. Several overall geometry quality criteria for the shape of the developed resist profile cross-sections are defined. An approach, based on the defined overall quality characteristics and multicriterial parameter optimization, is proposed and implemented for fulfillment of the technological requirements for the produced resist profile dimensions.
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    Patterning of structures by e-beam lithography and ion etching for gas sensor applications
    (2014-01-01) Durina P.; Bencurova A.; Konecnikova A.; Kostic I.; Vutova K.; Koleva E.; Mladenov G.; Kus P.; Plecenik A.
    This work deals with a method of preparation of nanometer structures for a gas detector based on e-beam lithography and ion etching of a thin TiO2 film. The aim was the fabrication of a gas sensor with meander or comb structures of nanometer dimensions. This is of importance since both the size of the contacts and the layer thickness affect the sensor's sensitivity.