Study and comparison of resist characteristics for different negative tone electron beam resists

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creativework.publisherInstitute of Physicsen
dc.contributor.authorAndok R.
dc.contributor.authorVutova K.
dc.contributor.authorBencurova A.
dc.contributor.authorKostic I.
dc.contributor.authorKoleva E.
dc.date.accessioned2024-07-10T14:27:05Z
dc.date.accessioned2024-07-10T14:50:35Z
dc.date.available2024-07-10T14:27:05Z
dc.date.available2024-07-10T14:50:35Z
dc.date.issued2023-01-01
dc.description.abstractIn this work, four types of negative electron beam resists are investigated. Electron beam lithography (EBL) experiments were conducted using EBL system ZBA23 (Raith) with the variable-shaped electron beam cross-section at 40 keV electron energy. Important electron beam resist characteristics such as sensitivity, dissolution rate, aspect ratio and sidewall developed profiles in the chemically amplified resist (CAR) SU-8 2000, non-CARs ma-N 2410 and ARN-7520, and inorganic negative resist HSQ XR-1514 are studied and compared. This study was motivated by the selection of a suitable resist for practical use such as large area gratings fabrication for optoelectronics.
dc.identifier.doi10.1088/1742-6596/2443/1/012006
dc.identifier.issn1742-6596
dc.identifier.issn1742-6588
dc.identifier.scopusSCOPUS_ID:85149921190en
dc.identifier.urihttps://rlib.uctm.edu/handle/123456789/802
dc.language.isoen
dc.source.urihttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85149921190&origin=inward
dc.titleStudy and comparison of resist characteristics for different negative tone electron beam resists
dc.typeConference Paper
oaire.citation.issue1
oaire.citation.volume2443
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