Modeling approaches for electron beam lithography

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creativework.publisherInstitute of Physics Publishinghelen.craven@iop.orgen
dc.contributor.authorKoleva E.
dc.contributor.authorVutova K.
dc.contributor.authorAsparuhova B.
dc.contributor.authorKostic I.
dc.contributor.authorCvetkov K.
dc.contributor.authorGerasimov V.
dc.date.accessioned2024-07-10T14:27:04Z
dc.date.accessioned2024-07-10T14:49:02Z
dc.date.available2024-07-10T14:27:04Z
dc.date.available2024-07-10T14:49:02Z
dc.date.issued2018-10-19
dc.description.abstractIn this paper, a study based on the mathematical modelling, applying different process simulation tools (CASINO, TREM, SELID) for characterization of PMMA resist and for the improvement of the resolution concerning the critical dimensions of nano-patterning by electron beam lithography (EBL) is presented. Data for important EBL characteristics (energy deposition function, proximity effect parameters, solubility rate, etc.) are obtained by applying different approaches (Monte Carlo methods, regression models, etc.).
dc.identifier.doi10.1088/1742-6596/1089/1/012016
dc.identifier.issn1742-6596
dc.identifier.issn1742-6588
dc.identifier.scopusSCOPUS_ID:85056305098en
dc.identifier.urihttps://rlib.uctm.edu/handle/123456789/499
dc.language.isoen
dc.source.urihttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85056305098&origin=inward
dc.titleModeling approaches for electron beam lithography
dc.typeConference Paper
oaire.citation.issue1
oaire.citation.volume1089
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