Optimisation criteria for the process electron beam lithography of negative AR-N7520 resists

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creativework.publisherInstitute of Physicsen
dc.contributor.authorKoleva E.
dc.contributor.authorKostic I.
dc.contributor.authorAndok R.
dc.contributor.authorVutova K.
dc.contributor.authorBencurova A.
dc.contributor.authorKonecnikova A.
dc.date.accessioned2024-07-10T14:27:05Z
dc.date.accessioned2024-07-10T14:50:35Z
dc.date.available2024-07-10T14:27:05Z
dc.date.available2024-07-10T14:50:35Z
dc.date.issued2023-01-01
dc.description.abstractExperimental investigation of negative electron resist AR-N 7520 profiles using an electron beam lithography system ZBA23 (Raith) is performed at variation of the exposure doses and the exposure patterns. The form of the obtained after the exposure resist profiles is investigated and optimized. Artificial neural networks for the dependence of the overall geometry of the obtained resist profiles on process parameters are trained, tested and validated. Several overall geometry quality criteria for the shape of the developed resist profile cross-sections are defined. An approach, based on the defined overall quality characteristics and multicriterial parameter optimization, is proposed and implemented for fulfillment of the technological requirements for the produced resist profile dimensions.
dc.identifier.doi10.1088/1742-6596/2443/1/012007
dc.identifier.issn1742-6596
dc.identifier.issn1742-6588
dc.identifier.scopusSCOPUS_ID:85149904543en
dc.identifier.urihttps://rlib.uctm.edu/handle/123456789/800
dc.language.isoen
dc.source.urihttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85149904543&origin=inward
dc.titleOptimisation criteria for the process electron beam lithography of negative AR-N7520 resists
dc.typeConference Paper
oaire.citation.issue1
oaire.citation.volume2443
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