Structural investigation of tellurium based thin films

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creativework.keywordsChalcogenides, Morphology, Structure, Thin films, Topology
creativework.publisherUniversity of Chemical Technology and Metallurgyjournal@uctm.eduen
dc.contributor.authorIvanova V.
dc.contributor.authorTrifonova Y.
dc.contributor.authorLilova V.
dc.contributor.authorMikli V.
dc.contributor.authorStoyanova-Ivanova A.
dc.date.accessioned2024-07-16T11:16:48Z
dc.date.accessioned2024-07-16T11:18:51Z
dc.date.available2024-07-16T11:16:48Z
dc.date.available2024-07-16T11:18:51Z
dc.date.issued2018-01-01
dc.description.abstractTellurium based materials possess a low temperature phase change transition. Sometimes they cannot be obtained in an amorphous state under normal conditions. Thus they can be used as an active element in phase change memory devices. Our study is dedicated to the synthesis of tellurium based materials using the systems (GeTe3)100-xInx, x = 5 mol %, 10 mol %, 15 mol % and 20 mol % and (GeTe4)100-xInx, x = 5 mol %, 10 mol %, 15 mol % and 20 mol %, the deposition of thin films on their ground and the investigation of their morphology, topology and structure aiming to obtain new knowledge for evaluation of the possibility for application of these materials in phase change memory devices.
dc.identifier.issn1314-7978
dc.identifier.issn1314-7471
dc.identifier.scopusSCOPUS_ID:85047394024en
dc.identifier.urihttps://rlib.uctm.edu/handle/123456789/1215
dc.language.isoen
dc.source.urihttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85047394024&origin=inward
dc.titleStructural investigation of tellurium based thin films
dc.typeArticle
oaire.citation.issue4
oaire.citation.volume53
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