Efficiency of the Galvanostatic Formation of Anodic Antimony Oxide in Oxalic Acid Solutions

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creativework.keywordsantimony anodic dissolution, film formation efficiency, galvanostatic anodization and electric field intensity
creativework.publisherSociedade Portuguesa de Electroquimicaen
dc.contributor.authorGirginov C.
dc.contributor.authorLilov E.
dc.contributor.authorKozhukharov S.
dc.contributor.authorLilova V.
dc.date.accessioned2024-07-10T14:27:05Z
dc.date.accessioned2024-07-10T14:50:07Z
dc.date.available2024-07-10T14:27:05Z
dc.date.available2024-07-10T14:50:07Z
dc.date.issued2022-03-12
dc.description.abstractThe formation of thick anodic oxide films on antimony in diluted solutions of oxalic acid (CO(OH)2) was studied under galvanostatic and isothermal conditions. The film formation was always accompanied by a dissolution process which strongly depended on the growth conditions. The formation efficiency, as determined by the dissolved metal amount, was affected by the CO(OH)2 concentration, the current density and the anodization time. The dissolved antimony amount increased with higher CO(OH)2 concentrations and anodization time, and with lower current densities. The analysis of the total current density suggests the occurrence of a formed film and a dissolving component. According to the calculations, the anodic oxides composition is close to Sb2O3. The growth of anodic Sb2O3 took place at high electric fields within the oxide film. The thicknesses of the formed films were calculated by taking into account their dissolution. The film formation efficiency was determined at various current densities.
dc.identifier.doi10.4152/pea.2022400203
dc.identifier.issn1647-1571
dc.identifier.issn0872-1904
dc.identifier.scopusSCOPUS_ID:85127220749en
dc.identifier.urihttps://rlib.uctm.edu/handle/123456789/707
dc.language.isoen
dc.source.urihttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85127220749&origin=inward
dc.titleEfficiency of the Galvanostatic Formation of Anodic Antimony Oxide in Oxalic Acid Solutions
dc.typeArticle
oaire.citation.issue2
oaire.citation.volume40
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