Photoinduced changes in As-Se-Ag amorphous films

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creativework.publisherInstitute of Physics Publishingen
dc.contributor.authorIlcheva V.
dc.contributor.authorBoev V.
dc.contributor.authorRoussev D.
dc.contributor.authorPetkov P.
dc.contributor.authorPetkova T.
dc.contributor.authorSharlandjiev P.
dc.contributor.authorNasarova D.
dc.date.accessioned2024-07-10T14:27:03Z
dc.date.accessioned2024-07-10T14:47:03Z
dc.date.available2024-07-10T14:27:03Z
dc.date.available2024-07-10T14:47:03Z
dc.date.issued2008-05-01
dc.description.abstractThin films from the As-Se-Ag system have been prepared on glass and silicon substrates by thermal vacuum evaporation from previously fabricated bulk glassy samples. The amorphous state of the samples has been proved by X-ray diffraction. Some optical properties of the amorphous As-Se-Ag thin films have been studied in relation to the Ag concentration in the sample. In order to investigate the photoinduced changes due to irradiation by with He-Ne laser light, transmission spectra of the thin films have been measured before and after irradiation. The optical characteristics as a function of the composition have been studied. © 2008 IOP Publishing Ltd.
dc.identifier.doi10.1088/1742-6596/113/1/012018
dc.identifier.issn1742-6596
dc.identifier.issn1742-6588
dc.identifier.scopusSCOPUS_ID:44649089413en
dc.identifier.urihttps://rlib.uctm.edu/handle/123456789/138
dc.language.isoen
dc.source.urihttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=44649089413&origin=inward
dc.titlePhotoinduced changes in As-Se-Ag amorphous films
dc.typeArticle
oaire.citation.issue1
oaire.citation.volume113
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