Influence of the preparation method on the As-Se-AgI thin films behaviour

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creativework.publisherInstitute of Physics Publishingen
dc.contributor.authorHineva T.
dc.contributor.authorPetkova T.
dc.contributor.authorPetkov P.
dc.contributor.authorMikli V.
dc.contributor.authorSocol G.
dc.contributor.authorMihailescu C.
dc.contributor.authorMihailescu I.
dc.date.accessioned2024-07-10T14:27:03Z
dc.date.accessioned2024-07-10T14:47:03Z
dc.date.available2024-07-10T14:27:03Z
dc.date.available2024-07-10T14:47:03Z
dc.date.issued2008-05-01
dc.description.abstractBulk glasses of the (As2Se3)1-x (AgI) x and (AsSe)1-x(AgI)x systems, where x 5, 10, 15 up to 35 mol.% have been prepared by the melt-quenched technique. The thin films have been deposited by means of vacuum thermal evaporation (VTE) and pulsed laser deposition (PLD). The XRD investigation reveals a generally amorphous structure; small peaks are only observed in the samples with the highest AgI. The film compositions have been determined by EDS (energy dispersive X-ray microanalysis). WDS (wavelength dispersive spectroscopy) studies have shown that the films do not contain oxygen within the accuracy of the method (1 %). The films are dense with smooth surface as revealed by using scanning electron microscopy (SEM) and atomic force microscopy (AFM). © 2008 IOP Publishing Ltd.
dc.identifier.doi10.1088/1742-6596/113/1/012023
dc.identifier.issn1742-6596
dc.identifier.issn1742-6588
dc.identifier.scopusSCOPUS_ID:44649087706en
dc.identifier.urihttps://rlib.uctm.edu/handle/123456789/137
dc.language.isoen
dc.source.urihttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=44649087706&origin=inward
dc.titleInfluence of the preparation method on the As-Se-AgI thin films behaviour
dc.typeArticle
oaire.citation.issue1
oaire.citation.volume113
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