PMMA resist profile and proximity effect dependence on the electron-beam lithography process parameters

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creativework.publisherInstitute of Physics Publishinghelen.craven@iop.orgen
dc.contributor.authorKostic I.
dc.contributor.authorVutova K.
dc.contributor.authorKoleva E.
dc.contributor.authorBencurova A.
dc.date.accessioned2024-07-10T14:27:04Z
dc.date.accessioned2024-07-10T14:49:34Z
dc.date.available2024-07-10T14:27:04Z
dc.date.available2024-07-10T14:49:34Z
dc.date.issued2020-06-02
dc.description.abstractThe study reveals the influence of the electron-beam lithography parameters (such as the exposure dose, resist thickness, depth) on the resist profile shape in the case of the PMMA (polymethyl-methacrylate) positive resist. The experiments are performed using an Elphy Quantum (Raith) e-beam lithography control system installed on an Inspect F50 (FEI) scanning electron microscope with a field emission cathode and a Gaussian intensity distribution. Profiles developed in the PMMA using the MIBK:IPA 1:3 developer and simulation results based on measurements along the resist profile depth for the case of 30-keV electron energy are presented and discussed. The results contribute to the knowledge on electron scattering in the resist/substrate in electron-beam lithography and assist in the development and approval of simulation tools for prediction and control of resist profiles in thick PMMA layers for lift-off nanopatterning.
dc.identifier.doi10.1088/1742-6596/1492/1/012015
dc.identifier.issn1742-6596
dc.identifier.issn1742-6588
dc.identifier.scopusSCOPUS_ID:85086412533en
dc.identifier.urihttps://rlib.uctm.edu/handle/123456789/599
dc.language.isoen
dc.source.urihttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85086412533&origin=inward
dc.titlePMMA resist profile and proximity effect dependence on the electron-beam lithography process parameters
dc.typeConference Paper
oaire.citation.issue1
oaire.citation.volume1492
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