Simulation and experimental study on developed profiles in the positive polymer resist PMMA

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creativework.publisherInstitute of Physics Publishinghelen.craven@iop.orgen
dc.contributor.authorKoleva E.
dc.contributor.authorVutova K.
dc.contributor.authorKostic I.
dc.date.accessioned2024-07-10T14:27:04Z
dc.date.accessioned2024-07-10T14:49:03Z
dc.date.available2024-07-10T14:27:04Z
dc.date.available2024-07-10T14:49:03Z
dc.date.issued2018-10-19
dc.description.abstractTheoretical and experimental study on developed profiles in the positive tone PMMA (polymethyl-methacrylate) resist and e-beam lithography process parameters was performed. E-beam lithography control system Elphy Quantum (Raith) installed on Scanning Electron Microscope Quanta FEG (FEI) with a field emission cathode and Gaussian intensity distribution has been used for the conducted experiments. Simulation results obtained by different models concerning the geometry of the developed resist profiles in PMMA were compared and verified with experimental data for improvement characterization of PMMA resist. The estimated models presented are useful for prediction and optimization of the developed resist profiles at electron beam lithography.
dc.identifier.doi10.1088/1742-6596/1089/1/012015
dc.identifier.issn1742-6596
dc.identifier.issn1742-6588
dc.identifier.scopusSCOPUS_ID:85056348882en
dc.identifier.urihttps://rlib.uctm.edu/handle/123456789/506
dc.language.isoen
dc.source.urihttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85056348882&origin=inward
dc.titleSimulation and experimental study on developed profiles in the positive polymer resist PMMA
dc.typeConference Paper
oaire.citation.issue1
oaire.citation.volume1089
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