Glass Formation in the GeSe2–As2Se3–MeCh Systems (Me = Cu, Ag, Zn, Cd, Sn, Pb; Ch = S, Se, Te)

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creativework.keywordschalcogenide glasses, glass formation, glass-forming region, synthesis
creativework.publisherMultidisciplinary Digital Publishing Institute (MDPI)en
dc.contributor.authorAljihmani L.
dc.date.accessioned2026-01-20T13:58:04Z
dc.date.accessioned2026-01-20T15:55:13Z
dc.date.available2026-01-20T13:58:04Z
dc.date.available2026-01-20T15:55:13Z
dc.date.issued2025-11-01
dc.description.abstractThe creation of novel, effective materials with specific properties is necessary to advance technology. To do this, objective regularities between the material’s composition, structure, and properties must be found. A comparative analysis of glass-forming regions, arranged according to the systematic substitution of one element by its analog within a periodic system subgroup, provides a useful framework for discussing trends in glass formation in semiconductor alloys. In this review, the information on the glass formation in the chalcogenide systems GeSe2–As2Se3–MeCh, where Me = Cu, Ag, Zn, Cd, Sn, Pb; Ch = Se, Te, was subjected to a thorough comparative analysis to establish objective patterns in the change in the glass-forming ability in these systems. The effect of MeCh on the formation of glass in the binary system GeSe2–As2Se3 was traced.
dc.identifier.doi10.3390/ma18215058
dc.identifier.issn1996-1944
dc.identifier.scopusSCOPUS_ID:105021607357en
dc.identifier.urihttps://rlib.uctm.edu/handle/123456789/1929
dc.language.isoen
dc.source.urihttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=105021607357&origin=inward
dc.titleGlass Formation in the GeSe2–As2Se3–MeCh Systems (Me = Cu, Ag, Zn, Cd, Sn, Pb; Ch = S, Se, Te)
dc.typeReview
oaire.citation.issue21
oaire.citation.volume18
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