Physical deposition of thin polyimide layers by applying an argon plasma assisted process

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creativework.publisherInstitute of Physics Publishinghelen.craven@iop.orgen
dc.contributor.authorDimov D.
dc.contributor.authorGeorgiev A.
dc.contributor.authorSpassova E.
dc.contributor.authorAssa J.
dc.contributor.authorDineff P.
dc.contributor.authorDanev G.
dc.date.accessioned2024-07-10T14:27:03Z
dc.date.accessioned2024-07-10T14:47:30Z
dc.date.available2024-07-10T14:27:03Z
dc.date.available2024-07-10T14:47:30Z
dc.date.issued2010-01-01
dc.description.abstractA novel method for physical deposition of thin polyimide layers by applying an argon plasma assisted process has been developed. The influence of the plasma on the combined molecular flux of the two thermally evaporated precursors - 4,4'- oxydianiline and pyromellitic dianhydride was investigated. The process parameters were changed in the limlts 0,4 - 2 A for the anode current and 80 - 170 V for the anode voltage. Their influence was studied using FTIR spectroscopy and electron microscopy techniques. It was proposed that the plasma flux crossing the molecular flows of the polyimide precursors enhances the imidization process by partly activating the precursor molecules in the gas phase. © 2010 IOP Publishing Ltd.
dc.identifier.doi10.1088/1742-6596/253/1/012049
dc.identifier.issn1742-6596
dc.identifier.issn1742-6588
dc.identifier.scopusSCOPUS_ID:79952412879en
dc.identifier.urihttps://rlib.uctm.edu/handle/123456789/206
dc.language.isoen
dc.source.urihttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=79952412879&origin=inward
dc.titlePhysical deposition of thin polyimide layers by applying an argon plasma assisted process
dc.typeConference Paper
oaire.citation.issue1
oaire.citation.volume253
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