Dry etching of thin chalcogenide films

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creativework.publisherInstitute of Physics Publishingen
dc.contributor.authorPetkov K.
dc.contributor.authorVassilev G.
dc.contributor.authorVassilev V.
dc.date.accessioned2024-07-10T14:27:03Z
dc.date.accessioned2024-07-10T14:47:28Z
dc.date.available2024-07-10T14:27:03Z
dc.date.available2024-07-10T14:47:28Z
dc.date.issued2010-01-01
dc.description.abstractFluorocarbon plasmas (pure and mixtures with Ar) were used to investigate the changes in the etching rate depending on the chalcogenide glasses composition and light exposure. The experiments were performed on modified commercial HZM-4 vacuum equipment in a diode electrode configuration. The surface microstructure of thin chalcogenide layers and its change after etching in CCl2F2 and CF4 plasmas were studied by SEM. The dependence of the composition of As-S-Ge, As-Se and multicomponent Ge-Se-Sb-Ag-I layers on the etching rate was discussed. The selective etching of some glasses observed after light exposure opens opportunities for deep structure processing applications. © 2010 IOP Publishing Ltd.
dc.identifier.doi10.1088/1742-6596/223/1/012011
dc.identifier.issn1742-6596
dc.identifier.issn1742-6588
dc.identifier.scopusSCOPUS_ID:77954723687en
dc.identifier.urihttps://rlib.uctm.edu/handle/123456789/192
dc.language.isoen
dc.source.urihttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=77954723687&origin=inward
dc.titleDry etching of thin chalcogenide films
dc.typeConference Paper
oaire.citation.issue1
oaire.citation.volume223
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