In-situ sol-gel synthesis and thin film deposition of Cu(In, Ga)(S, Se)2 solar cells

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creativework.keywordsBand gap, Chalcopyrite, Photovoltaic, Sol-gel, Spin-coating
dc.contributor.authorOliveira L.
dc.contributor.authorLyubenova T.
dc.contributor.authorMartí R.
dc.contributor.authorFraga D.
dc.contributor.authorRey A.
dc.contributor.authorKozhukharov V.
dc.contributor.authorCarda J.
dc.date.accessioned2024-07-16T11:16:45Z
dc.date.accessioned2024-07-16T11:17:53Z
dc.date.available2024-07-16T11:16:45Z
dc.date.available2024-07-16T11:17:53Z
dc.date.issued2013-12-17
dc.description.abstractChalcogenide-based solar cells Cu(In, Ga)(S, Se)2 were developed using an in-situ sol-gel method and spin coating thin film deposition. The influence of chemical composition and thermal treatment were studied in detail. It was revealed that these variables are related to band gap changes and final device performance. Increasing in band gap experimental values (1.18-1.67 eV) was observed, due to the formation of solid solution of Ga (III) and S (-II) incorporation in the crystal lattice. Optimal device performance of 3,1 % efficiency of solar energy conversion was achieved for the Cu(In1-xGax)(S, Se)2 solid solution.
dc.identifier.issn1314-7471
dc.identifier.issn1314-7978
dc.identifier.scopusSCOPUS_ID:84890153296en
dc.identifier.urihttps://rlib.uctm.edu/handle/123456789/1022
dc.language.isoen
dc.source.urihttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84890153296&origin=inward
dc.titleIn-situ sol-gel synthesis and thin film deposition of Cu(In, Ga)(S, Se)2 solar cells
dc.typeArticle
oaire.citation.issue6
oaire.citation.volume48
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