Preparation and characterization of SnO2 films for sensing applications

Simple item page
creativework.publisherInstitute of Physics Publishinghelen.craven@iop.orgen
dc.contributor.authorStefanov P.
dc.contributor.authorAtanasova G.
dc.contributor.authorManolov E.
dc.contributor.authorRaicheva Z.
dc.contributor.authorLazarova V.
dc.date.accessioned2024-07-10T14:27:03Z
dc.date.accessioned2024-07-10T14:47:29Z
dc.date.available2024-07-10T14:27:03Z
dc.date.available2024-07-10T14:47:29Z
dc.date.issued2008-01-01
dc.description.abstractSnO2 thin films for gas sensing applications were deposited by RF sputtering in a mixture of oxygen and argon. The morphology, structure and composition of the SnO2 films were analysed by XRD, SEM and XPS. SnO2 thin films showed a crystalline structure with a submicron particle size of 200 nm. The electronic structure of the film surface was elucidated by analysis of the photoelectron core level and valence band spectra of Sn.
dc.identifier.doi10.1088/1742-6596/100/8/082046
dc.identifier.issn1742-6596
dc.identifier.issn1742-6588
dc.identifier.scopusSCOPUS_ID:77956872106en
dc.identifier.urihttps://rlib.uctm.edu/handle/123456789/197
dc.language.isoen
dc.source.urihttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=77956872106&origin=inward
dc.titlePreparation and characterization of SnO2 films for sensing applications
dc.typeConference Paper
oaire.citation.issue8
oaire.citation.volume100
Files
Collections
Articles