Comparative study of the sidewall shape and proximity effect of the AR-N 7520 negative electron beam resist

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creativework.publisherIOP Publishing Ltden
dc.contributor.authorKostic I.
dc.contributor.authorVutova K.
dc.contributor.authorKoleva E.
dc.contributor.authorBencurova A.
dc.contributor.authorKonecnikova A.
dc.contributor.authorAndok R.
dc.date.accessioned2024-07-10T14:27:05Z
dc.date.accessioned2024-07-10T14:50:07Z
dc.date.available2024-07-10T14:27:05Z
dc.date.available2024-07-10T14:50:07Z
dc.date.issued2022-04-04
dc.description.abstractThis paper deals with the performance of the AR-N7520 (Allresist) negative electron beam resist (EB resist) which was selected as an etch mask for the fabrication of gratings on GaAs substrates. The developed resist sidewall shape is crucial for this purpose. The required near-to-vertical sidewall shape can be achieved by optimizing the electron beam lithography (EBL) process based on experimental investigations and computer simulations. The sidewall shape dependence on the EBL parameters (exposure dose, resist pattern, etc.) and the proximity effect are studied.
dc.identifier.doi10.1088/1742-6596/2240/1/012050
dc.identifier.issn1742-6596
dc.identifier.issn1742-6588
dc.identifier.scopusSCOPUS_ID:85128943391en
dc.identifier.urihttps://rlib.uctm.edu/handle/123456789/712
dc.language.isoen
dc.source.urihttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85128943391&origin=inward
dc.titleComparative study of the sidewall shape and proximity effect of the AR-N 7520 negative electron beam resist
dc.typeConference Paper
oaire.citation.issue1
oaire.citation.volume2240
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