On the existence of terahertz plasmons in two-dimensional semiconductor heterostructures

Simple item page
creativework.publisherInstitute of Electrical and Electronics Engineers Inc.en
dc.contributor.authorAbbas H.T.
dc.contributor.authorAljihmani L.
dc.contributor.authorAbbasi Q.H.
dc.contributor.authorQaraqe K.A.
dc.date.accessioned2024-07-10T14:27:04Z
dc.date.accessioned2024-07-10T14:49:30Z
dc.date.available2024-07-10T14:27:04Z
dc.date.available2024-07-10T14:49:30Z
dc.date.issued2019-09-01
dc.description.abstractPlasmons existing along a semiconductor heterostructure found in a high electron mobility transistor are studied. With the help of the electronic properties of group III-V semiconductor materials, a multilayer structure is described using an equivalent transmission line network. The existence of surface waves is investigated using the transverse resonance method, and it is established that the complex conductivity of the two-dimensional electron gas with a negative imaginary part yields surface plasmons in the terahertz frequency domain.
dc.identifier.doi10.1109/ICEAA.2019.8879335
dc.identifier.scopusSCOPUS_ID:85074942472en
dc.identifier.urihttps://rlib.uctm.edu/handle/123456789/558
dc.language.isoen
dc.source.urihttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85074942472&origin=inward
dc.titleOn the existence of terahertz plasmons in two-dimensional semiconductor heterostructures
dc.typeConference Paper
Files
Collections
Articles