Simulation and experimental study on developed profiles in the positive polymer resist PMMA

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2018-10-19
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Theoretical and experimental study on developed profiles in the positive tone PMMA (polymethyl-methacrylate) resist and e-beam lithography process parameters was performed. E-beam lithography control system Elphy Quantum (Raith) installed on Scanning Electron Microscope Quanta FEG (FEI) with a field emission cathode and Gaussian intensity distribution has been used for the conducted experiments. Simulation results obtained by different models concerning the geometry of the developed resist profiles in PMMA were compared and verified with experimental data for improvement characterization of PMMA resist. The estimated models presented are useful for prediction and optimization of the developed resist profiles at electron beam lithography.
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